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Datasheets for NPN EP

Datasheets found :: 5177
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |
No. Part Name Description Manufacturer
4111 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
4112 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
4113 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
4114 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
4115 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
4116 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4117 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4118 MMBT2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4119 MMBT4124 30 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4120 MMBT5088 35 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4121 MMBT5089 30 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4122 MMBT5550 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
4123 MMBT5550 160 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4124 MMBT6427 40 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4125 MMBT6428 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4126 MP4013 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4127 MP4020 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4128 MP4021 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4129 MP4024 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4130 MP4025 Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching TOSHIBA
4131 MP4101 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. TOSHIBA
4132 MP4104 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4133 MP4301 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4134 MP4303 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4135 MP4304 Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4136 MP4501 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4137 MP4502 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4138 MP4514 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4139 MPS2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4140 MPS2222A 75 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 5177
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |



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