| No. |
Part Name |
Description |
Manufacturer |
| 4111 |
UPD16875 |
Low power consumption P-channel high-side switch for USB(2-circuit) |
NEC |
| 4112 |
UPD16875G |
Low power consumption P-channel high-side switch for USB(2-circuit) |
NEC |
| 4113 |
UPD16876 |
Single low-consumption Pch high-side switch for USB |
NEC |
| 4114 |
UPD16876G |
Single low-consumption Pch high-side switch for USB |
NEC |
| 4115 |
UPD1713 |
Consumers ICs |
NEC |
| 4116 |
V.22 CALL SETUP WITH THE CMX867 |
V.22 Call Setup with the CMX867 |
CONSUMER MICROCIRCUITS LIMITED |
| 4117 |
V.22BIS CALL SETUP WITH THE CMX868 |
V.22bis Call Setup with the CMX868 |
CONSUMER MICROCIRCUITS LIMITED |
| 4118 |
V.23 |
Recommendations for V.23 1200/75bps Full-Duplex Call Set-Up |
CONSUMER MICROCIRCUITS LIMITED |
| 4119 |
VCS101, 103 & 401 |
Uninsulated Element |
Vishay |
| 4120 |
VOICE SECURITY, VARIABLE SPLIT BAND SCRA |
Split Band Scrambling Furnishes Voice Security |
CONSUMER MICROCIRCUITS LIMITED |
| 4121 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4122 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4123 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4124 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4125 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4126 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 4127 |
XT49U |
Quartz Crystals 1.8432MHz - 60.0MHz, Optional Third Lead, Optional Insulating Sleeve, Hermetically Sealed |
Vishay |
| 4128 |
Z86233 |
CMOS Z8 8K ROM CONSUMER CONTROLLER PROCESSOR |
Zilog |
| 4129 |
Z8623312PEC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4130 |
Z8623312PSC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4131 |
Z8623312SEC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4132 |
Z8623312SSC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4133 |
Z8623312VEC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4134 |
Z8623312VSC |
CMOS Z8 consumer controller. 12 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4135 |
Z8623316PEC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4136 |
Z8623316PSC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4137 |
Z8623316SEC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4138 |
Z8623316SSC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4139 |
Z8623316VEC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| 4140 |
Z8623316VSC |
CMOS Z8 consumer controller. 16 MHz, 8 Kbyte ROM, 237 bytes RAM, 24 I/O, 3.0V to 5.5V |
Zilog |
| | | |
