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Datasheets for ROELECTRONICS

Datasheets found :: 108616
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |
No. Part Name Description Manufacturer
4111 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4112 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4113 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
4114 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4115 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4116 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4117 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4118 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
4119 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
4120 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4121 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4122 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4123 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4124 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4125 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4126 AM82731-001 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
4127 AM82731-003 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4128 AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
4129 AM82731-006 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4130 AM82731-006 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
4131 AM82731-012 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4132 AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
4133 AM82731-025 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4134 AM82731-025 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
4135 AM82731-050 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4136 AM82731-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS ST Microelectronics
4137 AM82731-075 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
4138 AM82931-055 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4139 AM82931-055N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4140 AM82931-055S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics


Datasheets found :: 108616
Page: | 134 | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 |



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