| No. |
Part Name |
Description |
Manufacturer |
| 4141 |
IRF332 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 4142 |
IRF333 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 4143 |
IRF730 |
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 4144 |
IRF730 |
5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 4145 |
IRFBC40 |
N-CHANNEL 600V - 1.0 OHM - 6.2A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
| 4146 |
IRFD9120 |
1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET |
Intersil |
| 4147 |
IRFF330 |
3.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 4148 |
IS1U20 |
OPIC Light Detector for Infrared Communication (IrDA1.0 Compatible) |
SHARP |
| 4149 |
ISL6211 |
5-Bit VID Sync Buck DAC, Wide Range - 0.6VDC to 1.0VDC in 25mV Steps, and 1.0VDC to 1.75VDC in 50mV Steps, Transmeta Crusoe� CPU |
Intersil |
| 4150 |
ISL6211 |
5-Bit VID Sync Buck DAC, Wide Range - 0.6VDC to 1.0VDC in 25mV Steps, and 1.0VDC to 1.75VDC in 50mV Steps, Transmeta Crusoe� CPU |
Intersil |
| 4151 |
ISL6430 |
PWM Controller, +5V or +12V Input, VOUT 1.27V Min @ 1.0%, Resistor Programming, Broadband Gateway |
Intersil |
| 4152 |
ISL6552 |
PWM Controller, 2-4 Phase, 5-Bit VID, �1% Reg, VCORE =1.05/1.825V |
Intersil |
| 4153 |
ISL6553 |
PWM Controller, 2-Phase, 5-Bit VID, �1% Reg, VCORE =1.05/1.825V |
Intersil |
| 4154 |
ISL6562 |
PWM Controller, 2-Phase Current Mode, 5-Bit VID, Reg �0.8%, 1.05-1.825 Voltage, VRM 8.5 |
Intersil |
| 4155 |
JPS250PS12 |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 4156 |
JPS250PS12C |
Switching power supply. Max. power 250 W. Output voltage 12 V. Output current: 21.0 A (with 18 CFM); 17.0 A (convection cooled). |
International Power Sources |
| 4157 |
KBP100 |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4158 |
KBP100G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4159 |
KBP101G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4160 |
KBP102G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4161 |
KBP104G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4162 |
KBP106G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4163 |
KBP108G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4164 |
KBP110G |
SINGLE PHASE 1.0 AMP GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 4165 |
KC2-11 |
Surface Mount Frequency Multiplier Output 1.0 to 2.2 GHz |
Mini-Circuits |
| 4166 |
KM416L8031BT-G(L)0 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 4167 |
KM416L8031BT-G(L)Y |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 4168 |
KM416L8031BT-G(L)Z |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 4169 |
KM44C256B-10 |
100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 4170 |
KM44C256B-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
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