No. |
Part Name |
Description |
Manufacturer |
4141 |
3EZ16D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
4142 |
3EZ16D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
4143 |
3EZ17 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
4144 |
3EZ17 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
4145 |
3EZ170 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
4146 |
3EZ170 |
170 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
4147 |
3EZ170 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
4148 |
3EZ170D |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
4149 |
3EZ170D1 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
4150 |
3EZ170D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 1% tolerance. |
Motorola |
4151 |
3EZ170D10 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
4152 |
3EZ170D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 10% tolerance. |
Motorola |
4153 |
3EZ170D2 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
4154 |
3EZ170D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. 2% tolerance. |
Motorola |
4155 |
3EZ170D3 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
4156 |
3EZ170D4 |
3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
4157 |
3EZ170D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
4158 |
3EZ170D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
4159 |
3EZ170D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 170 V. |
Motorola |
4160 |
3EZ17D5 |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
4161 |
3EZ17D5 |
3W SILICON ZENER DIODE |
Jinan Gude Electronic Device |
4162 |
3EZ18 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
4163 |
3EZ18 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
4164 |
3EZ180 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) |
Panjit International Inc |
4165 |
3EZ180 |
180 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
4166 |
3EZ180 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
4167 |
3EZ180D |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
4168 |
3EZ180D1 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
4169 |
3EZ180D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance. |
Motorola |
4170 |
3EZ180D10 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
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