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Datasheets for NPN E

Datasheets found :: 5185
Page: | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 |
No. Part Name Description Manufacturer
4141 MP4304 Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4142 MP4501 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4143 MP4502 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4144 MP4514 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4145 MPS2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4146 MPS2222A 75 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4147 MPS3704 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4148 MPS3705 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4149 MPS3706 40 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4150 MPS5172 25 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4151 MPS5179 20 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4152 MPS651 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
4153 MPS6513 30 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4154 MPS6520 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4155 MPS6521 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4156 MPS6560 25 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4157 MPS6601 25 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
4158 MPS6602 30 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
4159 MPS8097 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4160 MPS8098 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4161 MPS8099 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4162 MT3S03AS TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4163 MT3S03AT TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4164 MT3S03AU TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4165 MT3S04AS TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4166 MT3S04AT TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4167 MT3S04AU TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4168 MT3S05T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4169 MT3S06S TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA
4170 MT3S06T TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS TOSHIBA


Datasheets found :: 5185
Page: | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 |



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