No. |
Part Name |
Description |
Manufacturer |
4141 |
MPS3704 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4142 |
MPS3705 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4143 |
MPS3706 |
40 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4144 |
MPS5172 |
25 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4145 |
MPS5179 |
20 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4146 |
MPS651 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
4147 |
MPS6513 |
30 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4148 |
MPS6520 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4149 |
MPS6521 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4150 |
MPS6560 |
25 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4151 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4152 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4153 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4154 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4155 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
4156 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4157 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4158 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4159 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4160 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4161 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4162 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4163 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4164 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4165 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4166 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4167 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4168 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4169 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
4170 |
MT3S35T |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
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