DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for PN EPITAXIAL

Datasheets found :: 5217
Page: | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 |
No. Part Name Description Manufacturer
4141 MP4303 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4142 MP4304 Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4143 MP4501 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4144 MP4502 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4145 MP4514 Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA
4146 MPS-A13 Silicon NPN epitaxial darlington transistor TOSHIBA
4147 MPS-A14 Silicon NPN epitaxial darlington transistor TOSHIBA
4148 MPS2221 Silicon NPN epitaxial transistor (PCT process) TOSHIBA
4149 MPS2221A Silicon NPN epitaxial transistor (PCT Process) TOSHIBA
4150 MPS2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4151 MPS2222 Silicon NPN epitaxial transistor (PCT process) TOSHIBA
4152 MPS2222A 75 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4153 MPS2222A Silicon NPN epitaxial transistor (PCT Process) TOSHIBA
4154 MPS3704 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4155 MPS3705 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4156 MPS3706 40 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
4157 MPS5172 25 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4158 MPS5179 20 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
4159 MPS651 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
4160 MPS6513 30 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4161 MPS6520 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4162 MPS6521 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
4163 MPS6560 25 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4164 MPS6601 25 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
4165 MPS6602 30 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
4166 MPS8097 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
4167 MPS8098 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4168 MPS8099 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
4169 MPSA05 NPN Epitaxial Silicon Transistor Samsung Electronic
4170 MPSA06 NPN Epitaxial Silicon Transistor Samsung Electronic


Datasheets found :: 5217
Page: | 135 | 136 | 137 | 138 | 139 | 140 | 141 | 142 | 143 |



© 2024 - www Datasheet Catalog com