No. |
Part Name |
Description |
Manufacturer |
4171 |
AM81720-012 |
COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
4172 |
AM81720-020 |
Transistor for communications applications |
SGS Thomson Microelectronics |
4173 |
AM81922-018 |
Transistor for communications applications |
SGS Thomson Microelectronics |
4174 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
4175 |
AM82023-010 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
4176 |
AM82023-016 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
4177 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
4178 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
4179 |
AM82223-010 |
TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
4180 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
4181 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
4182 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
4183 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
4184 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
4185 |
AM82325-040 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
4186 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
4187 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
4188 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
4189 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
4190 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
4191 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
4192 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
4193 |
AM82731-003 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
4194 |
AM82731-003 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
4195 |
AM82731-006 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
4196 |
AM82731-006 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
4197 |
AM82731-012 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
4198 |
AM82731-012 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
4199 |
AM82731-025 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
4200 |
AM82731-025 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
ST Microelectronics |
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