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Datasheets for OPTOELE

Datasheets found :: 4219
Page: | 136 | 137 | 138 | 139 | 140 | 141 |
No. Part Name Description Manufacturer
4171 VTT3323LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4172 VTT3324LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4173 VTT3325LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4174 VTT3423LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4175 VTT3424LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4176 VTT3425LA .025 NPN Phototransistors PerkinElmer Optoelectronics
4177 VTT7122 .025 NPN Phototransistors PerkinElmer Optoelectronics
4178 VTT7123 .025 NPN Phototransistors PerkinElmer Optoelectronics
4179 VTT7125 .025 NPN Phototransistors PerkinElmer Optoelectronics
4180 VTT7222 .025 NPN Phototransistors PerkinElmer Optoelectronics
4181 VTT7223 .025 NPN Phototransistors PerkinElmer Optoelectronics
4182 VTT7225 .025 NPN Phototransistors PerkinElmer Optoelectronics
4183 VTT9002 .040 NPN Phototransistors PerkinElmer Optoelectronics
4184 VTT9003 .040 NPN Phototransistors PerkinElmer Optoelectronics
4185 VTT9102 .040 NPN Phototransistors PerkinElmer Optoelectronics
4186 VTT9103 .040 NPN Phototransistors PerkinElmer Optoelectronics
4187 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4188 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4189 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4190 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4191 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4192 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4193 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4194 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4195 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4196 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4197 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4198 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4199 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
4200 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 4219
Page: | 136 | 137 | 138 | 139 | 140 | 141 |



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