| No. |
Part Name |
Description |
Manufacturer |
| 4171 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 4172 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 4173 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 4174 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 4175 |
2SC5585TL |
NPN Low VCE(sat) Transistor |
ROHM |
| 4176 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 4177 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 4178 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 4179 |
2SC5663T2L |
NPN Low VCE(sat) Transistor |
ROHM |
| 4180 |
2SC5801 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
| 4181 |
2SC5801-T3 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD |
NEC |
| 4182 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 4183 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 4184 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 4185 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 4186 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4187 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4188 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 4189 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4190 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4191 |
2SC6043 |
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP |
ON Semiconductor |
| 4192 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 4193 |
2SC6100 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4194 |
2SC6133 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4195 |
2SC6134 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4196 |
2SC6135 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 4197 |
2SC732 |
Silicon NPN epitaxial planar transistor, low noise amplifier applications |
TOSHIBA |
| 4198 |
2SC732TM |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 4199 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 4200 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
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