| No. |
Part Name |
Description |
Manufacturer |
| 4201 |
2N5321 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 4202 |
2N5323 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 4203 |
2N5344 |
High-voltage PNP silicon transistor, TO-66 case |
Motorola |
| 4204 |
2N5345 |
High-voltage PNP silicon transistor, TO-66 case |
Motorola |
| 4205 |
2N5357 |
PNP silicon switching transistor, TO-37 case |
Motorola |
| 4206 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 4207 |
2N5415 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 4208 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 4209 |
2N5416 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 4210 |
2N5432 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 4211 |
2N5433 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 4212 |
2N5434 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 4213 |
2N5490 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 4214 |
2N5492 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 4215 |
2N5494 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 4216 |
2N5496 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 4217 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4218 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4219 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4220 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4221 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4222 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 4223 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4224 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4225 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4226 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4227 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 4228 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 4229 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 4230 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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