| No. |
Part Name |
Description |
Manufacturer |
| 421 |
ARA210A12 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 1 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
| 422 |
ARA220A12 |
RA-relay. Microwave relay for attenuator circuit. 2 form C. Coil voltage 12 V DC. 2 coil latching type. Surface-mount terminal. |
Matsushita Electric Works(Nais) |
| 423 |
ARE1312 |
RE-relay. 2.6 GHz 75 ohm relays for broadcasting industry. Standard PC board terminal. Nominal voltage 12 V DC. |
Matsushita Electric Works(Nais) |
| 424 |
ARX1012 |
RX-relay. Small micro wave relay. 1 form C. Single side stable type. Nominal voltage 12 V DC. |
Matsushita Electric Works(Nais) |
| 425 |
ARX1112 |
RX-relay. Small micro wave relay. 1 form C. 1 coil latching type. Nominal voltage 12 V DC. |
Matsushita Electric Works(Nais) |
| 426 |
ARX1212 |
RX-relay. Small micro wave relay. 1 form C. 2 coil latching type. Nominal voltage 12 V DC. |
Matsushita Electric Works(Nais) |
| 427 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 428 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 429 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 430 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 431 |
AS7C164-12JC |
5V 8K x 8 CMOS SRAM, 12 ns access time |
Alliance Semiconductor |
| 432 |
AS7C164-12PC |
5V 8K x 8 CMOS SRAM, 12 ns access time |
Alliance Semiconductor |
| 433 |
ASM3P2669AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 434 |
ASM3P2669AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 435 |
ASM3P2669AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 436 |
ASM3P2669AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 437 |
ASM3P2669AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 438 |
ASM3P2760A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 439 |
ASM3P2760A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 440 |
ASM3P2760A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 441 |
ASM3P2760A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 442 |
ASM3P2760A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 443 |
ASM3P2760AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 444 |
ASM3P2760AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 445 |
ASM3P2760AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 446 |
ASM3P2760AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 447 |
ASM3P2760AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 448 |
ASM3P2762A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 449 |
ASM3P2762A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 450 |
ASM3P2762A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| | | |
