| No. |
Part Name |
Description |
Manufacturer |
| 421 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 422 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 423 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 424 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 425 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 426 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 427 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 428 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 429 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 430 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 431 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 432 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 433 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 434 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 435 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 436 |
54H87 |
4-BIT True Complement, Zero/One Element |
Fairchild Semiconductor |
| 437 |
6SK7 |
REGELBARE HF-, ZF-, NF- PENTODE |
etc |
| 438 |
74H87 |
4-BIT True Complement, Zero/One Element |
Fairchild Semiconductor |
| 439 |
9S12B128_ZIP |
MC9S12B128 Users Guide, zip format |
Motorola |
| 440 |
9S12C128_ZIP |
MC9S12C128 Users Guides, zip format, all files |
Motorola |
| 441 |
9S12C32_ZIP |
MC9S12C32 Users Guides, zip format, all files |
Motorola |
| 442 |
9S12DP256B-ZIP |
MC9S12DP256B Users Guide, zip format |
Motorola |
| 443 |
9S12DP512_ZIP |
MC9S12DP512 Users Guide, zip format |
Motorola |
| 444 |
9S12DT128B_ZIP |
MC9S12DT128B, MC9S12DG128B, MC9S12DJ128B, MC9S12DB128B User Guides, zipped format |
Motorola |
| 445 |
9S12DT256-ZIP |
MC9S12DT256 Users Guides, zip format |
Motorola |
| 446 |
9S12H256_ZIP |
MC9S12H256 Users Guides, zip format |
Motorola |
| 447 |
AD8217 |
High Resolution, Zero-Drift Current Shunt Monitor |
Analog Devices |
| 448 |
AD8237 |
Micropower, Zero Drift, True Rail-to-Rail Instrumentation Amplifier |
Analog Devices |
| 449 |
AD8293G160 |
Low Cost, Zero-Drift In-Amp with Filter and Fixed Gain = 160 |
Analog Devices |
| 450 |
AD8293G80 |
Low Cost, Zero-Drift In-Amp with Filter and Fixed Gain = 80 |
Analog Devices |
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