| No. |
Part Name |
Description |
Manufacturer |
| 421 |
MC33004B |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 422 |
MC34004 |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 423 |
MC34004A |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 424 |
MC34004B |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 425 |
MC35004 |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 426 |
MC35004A |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 427 |
MC35004B |
V(cc): +-18V; 680mW; general purpose quad J-FET operational amplifier |
SGS Thomson Microelectronics |
| 428 |
MH303 |
Cellular-band Quad-FET Mixer |
WJ Communications |
| 429 |
MH303-G |
Cellular-band Quad-FET Mixer |
WJ Communications |
| 430 |
MH303-PCB |
Cellular-band Quad-FET Mixer |
WJ Communications |
| 431 |
MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 432 |
MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount |
ON Semiconductor |
| 433 |
MTA1N60E |
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor |
Motorola |
| 434 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 435 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 436 |
MTB16N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount |
ON Semiconductor |
| 437 |
MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 438 |
MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 439 |
MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 440 |
MTB3N100E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 441 |
MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 442 |
MTB3N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 443 |
MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 444 |
MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 445 |
MTB6N60E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 446 |
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 447 |
MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 448 |
MTD10N10EL-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 449 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 450 |
MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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