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Datasheets for 0-1

Datasheets found :: 11130
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |
No. Part Name Description Manufacturer
421 16CTQ060-1 SCHOTTKY RECTIFIER International Rectifier
422 16CTQ080-1 80V 16A Schottky Common Cathode Diode in a TO-262 package International Rectifier
423 16CTQ100-1 100V 16A Schottky Common Cathode Diode in a TO-262 package International Rectifier
424 16CTQ80-1 SCHOTTKY RECTIFIER International Rectifier
425 1718-32L 32 W, 24 V, 1750-1850 MHz common base transistor GHz Technology
426 1719-2 2 W, 2 V, 1700-1900 MHz common base transistor GHz Technology
427 1719-20 20 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
428 1719-8 8 W, 28 V, 1700-1900 MHz common base transistor GHz Technology
429 1720-10 1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
430 1720-13 1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications SGS Thomson Microelectronics
431 180-1 Unbased Lens-End Lamps Gilway Technical Lamp
432 180-14 Midget flanged base lens-end lamp. 2.50V, 0.350A, 2100Lux. Gilway Technical Lamp
433 1819-35 35 W, 28 V, 1750-1850 MHz common base transistor GHz Technology
434 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology
435 1920A12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
436 1920A20 20 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
437 1920AB12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
438 1920AB25 25 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
439 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
440 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
441 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
442 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
443 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
444 1MB10-120 Fuji Discrete Package IGBT Fuji Electric
445 1MBH60-100 INSULATED GATE BIPOLAR TRANSISTOR Fuji Electric
446 1N4000-1 Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 New Jersey Semiconductor
447 1N4100-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
448 1N4100-1 Zener Voltage Regulator Diode Microsemi
449 1N4100-1E3 Zener Voltage Regulator Diode Microsemi
450 1N4110-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated


Datasheets found :: 11130
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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