No. |
Part Name |
Description |
Manufacturer |
421 |
16CTQ060-1 |
SCHOTTKY RECTIFIER |
International Rectifier |
422 |
16CTQ080-1 |
80V 16A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
423 |
16CTQ100-1 |
100V 16A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
424 |
16CTQ80-1 |
SCHOTTKY RECTIFIER |
International Rectifier |
425 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
426 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
427 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
428 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
429 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
430 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
431 |
180-1 |
Unbased Lens-End Lamps |
Gilway Technical Lamp |
432 |
180-14 |
Midget flanged base lens-end lamp. 2.50V, 0.350A, 2100Lux. |
Gilway Technical Lamp |
433 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
434 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
435 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
436 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
437 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
438 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
439 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
440 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
441 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
442 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
443 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
444 |
1MB10-120 |
Fuji Discrete Package IGBT |
Fuji Electric |
445 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
446 |
1N4000-1 |
Diode Zener Single 7.5V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
447 |
1N4100-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
448 |
1N4100-1 |
Zener Voltage Regulator Diode |
Microsemi |
449 |
1N4100-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
450 |
1N4110-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
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