| No. |
Part Name |
Description |
Manufacturer |
| 421 |
SSI10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 422 |
SSI10N60BTU |
600V N-Channel B-FET |
Fairchild Semiconductor |
| 423 |
SSP10N60A |
600V N-Channel A-FET / Replaced by SSP10N60B |
Fairchild Semiconductor |
| 424 |
SSP10N60A |
600V N-Channel A-FET / Replaced by SSP10N60B |
Fairchild Semiconductor |
| 425 |
SSP10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 426 |
SSS10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 427 |
SSW10N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 428 |
SSW10N60BTM |
600V N-Channel B-FET |
Fairchild Semiconductor |
| 429 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 430 |
STB40N60M2 |
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 431 |
STD10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 432 |
STF10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 433 |
STF40N60M2 |
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 434 |
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 435 |
STFI40N60M2 |
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 436 |
STGB10N60L |
N-CHANNEL 10A - 600V D 2 PAK LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 437 |
STGP10N60 |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
ST Microelectronics |
| 438 |
STGP10N60L |
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT |
SGS Thomson Microelectronics |
| 439 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 440 |
STP10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 441 |
STP40N60M2 |
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 442 |
STU10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 443 |
STW40N60M2 |
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-247 package |
ST Microelectronics |
| 444 |
STW70N60M2 |
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package |
ST Microelectronics |
| 445 |
T1000N600 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 446 |
T100N600 |
Mains frequency thyristor |
IPRS Baneasa |
| 447 |
T100N600 |
100A 600V THYRISTOR |
IPRS Baneasa |
| 448 |
T100N600C |
Mains frequency thyristor |
IPRS Baneasa |
| 449 |
T100N600F |
Mains frequency thyristor |
IPRS Baneasa |
| 450 |
T1200N600 |
Mains frequency thyristor |
IPRS Baneasa |
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