No. |
Part Name |
Description |
Manufacturer |
421 |
MRF1150MC |
Microwave Pulse Power NPN silicon Transistor, 150W peak 960-1215MHz |
Motorola |
422 |
MRF1250M |
Microwave Pulse Power NPN silicon Transistor, 250W peak 1020-1150MHz |
Motorola |
423 |
MRF1325M |
Microwave Pulse Power NPN silicon Transistor, 325W peak 1020-1150MHz |
Motorola |
424 |
MRF1375 |
Microwave Power Transistor NPN Silicon 375W (peak) 1025-1150MHz |
Motorola |
425 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
426 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
427 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
428 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
429 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
430 |
MRF5S21150R3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
431 |
MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
432 |
MRF5S21150S |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
433 |
MRF5S21150SR3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
434 |
MRF5S21150SR3 |
RF POWER FIELD EFFECT TRANSISTORS |
Motorola |
435 |
MSC1004M |
RF & MICROWAVES TRANSISTORS AVIONICS APPLICATIONS 1025-1150 MHz |
ST Microelectronics |
436 |
MSC1004MP |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS 1025-1150MHz |
ST Microelectronics |
437 |
MSC1150M |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
438 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
439 |
NJW1150 |
6-Channel Electronic Volume |
New Japan Radio |
440 |
NJW1150M |
6-CHANNEL ELECTRONIC VOLUME |
New Japan Radio |
441 |
OA1150 |
Germanium PIN diode, universal purpose |
Felvezeto Katalogus 1966 |
442 |
OA1150 |
Germanium universal diode |
TUNGSRAM |
443 |
PSB21150-FV1.3 |
IPAC-X (ISDN PC Adapter Circuit Exten... |
Infineon |
444 |
PSB21150-HV1.3 |
IPAC-X (ISDN PC Adapter Circuit Exten... |
Infineon |
445 |
PTFB211503FL-V2 |
High Power RF LDMOS FET 150W, 2110 - 2170 MHz |
Wolfspeed |
446 |
PXFE211507FC-V1 |
High Power RF LDMOS FET 170W, 28V, 2110 - 2170 MHz |
Wolfspeed |
447 |
RZ1150 |
Avalanche Diodes with built-in Thyristor |
Sanken |
448 |
SC1150 |
PROGRAMMABLE DC/DC CONTROLLER |
Semtech |
449 |
SC1150CS |
PROGRAMMABLE DC/DC CONTROLLER |
Semtech |
450 |
SC1150CS.TR |
Programmable DC/DC controller |
Semtech |
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