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Datasheets for 17A

Datasheets found :: 1992
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |
No. Part Name Description Manufacturer
421 AQV217A PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tube packing style. Matsushita Electric Works(Nais)
422 AQV217AX PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 1/2/3-pin side. Matsushita Electric Works(Nais)
423 AQV217AZ PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 4/5/6-pin side. Matsushita Electric Works(Nais)
424 AQW217A PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tube packing style. Matsushita Electric Works(Nais)
425 AQW217AX PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. Matsushita Electric Works(Nais)
426 AQW217AZ PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. Matsushita Electric Works(Nais)
427 AT17A FPGA Configuration EEPROM Atmel
428 BA5917AFP CD 4ch BTL ROHM
429 BC317A 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 220 hFE Continental Device India Limited
430 BC317A NPN Small Signal Transistor National Semiconductor
431 BC817A General Purpose Transistor Korea Electronics (KEC)
432 BD616LV4017AC-55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
433 BD616LV4017AC-70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
434 BD616LV4017ACG55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
435 BD616LV4017ACG70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
436 BD616LV4017ACP55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
437 BD616LV4017ACP55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
438 BD616LV4017ACP70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
439 BD616LV4017AI-55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
440 BD616LV4017AI-70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
441 BD616LV4017AIG55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
442 BD616LV4017AIG70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
443 BD616LV4017AIP55 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
444 BD616LV4017AIP70 Very Low Power/Voltage CMOS SRAM 256K X 16 bit Brilliance Semiconductor
445 BE5517A βE5517A Dual transconductance operational amplifiers IPRS Baneasa
446 BE5517A βE5517A Dual transconductance operational amplifiers IPRS Baneasa
447 BFG17A NPN 3 GHz wideband transistor Philips
448 BFS17A NPN 3 GHz wideband transistor NXP Semiconductors
449 BFS17A NPN 3 GHz wideband transistor Philips
450 BFS17A Silicon NPN Planar RF Transistor Vishay


Datasheets found :: 1992
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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