No. |
Part Name |
Description |
Manufacturer |
421 |
AQV217A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
422 |
AQV217AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
423 |
AQV217AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 200V, load current 180 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
424 |
AQW217A |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
425 |
AQW217AX |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
426 |
AQW217AZ |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
427 |
AT17A |
FPGA Configuration EEPROM |
Atmel |
428 |
BA5917AFP |
CD 4ch BTL |
ROHM |
429 |
BC317A |
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 220 hFE |
Continental Device India Limited |
430 |
BC317A |
NPN Small Signal Transistor |
National Semiconductor |
431 |
BC817A |
General Purpose Transistor |
Korea Electronics (KEC) |
432 |
BD616LV4017AC-55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
433 |
BD616LV4017AC-70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
434 |
BD616LV4017ACG55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
435 |
BD616LV4017ACG70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
436 |
BD616LV4017ACP55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
437 |
BD616LV4017ACP55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
438 |
BD616LV4017ACP70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
439 |
BD616LV4017AI-55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
440 |
BD616LV4017AI-70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
441 |
BD616LV4017AIG55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
442 |
BD616LV4017AIG70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
443 |
BD616LV4017AIP55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
444 |
BD616LV4017AIP70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
445 |
BE5517A |
βE5517A Dual transconductance operational amplifiers |
IPRS Baneasa |
446 |
BE5517A |
βE5517A Dual transconductance operational amplifiers |
IPRS Baneasa |
447 |
BFG17A |
NPN 3 GHz wideband transistor |
Philips |
448 |
BFS17A |
NPN 3 GHz wideband transistor |
NXP Semiconductors |
449 |
BFS17A |
NPN 3 GHz wideband transistor |
Philips |
450 |
BFS17A |
Silicon NPN Planar RF Transistor |
Vishay |
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