No. |
Part Name |
Description |
Manufacturer |
421 |
I2184A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
422 |
I2184A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
423 |
I2184A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
424 |
I2184B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
425 |
I2184B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
426 |
KFF6668A |
1033 MHz TCAS BPF |
etc |
427 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
428 |
KM416L8031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
429 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
430 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
431 |
KM44L32031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
432 |
KM44L32031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
433 |
KM44L32031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
434 |
KM44L32031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
435 |
KM44S3203BT-G_FA |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). |
Samsung Electronic |
436 |
KM48L16031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
437 |
KM48L16031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
438 |
KM48L16031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
439 |
KM48L16031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
440 |
KU80C186EC13 |
16-bit high-integration embedded processor. 13 MHz, 5 V |
Intel |
441 |
KU80C188EC13 |
16-bit high-integration embedded processor. 13 MHz, 5 V |
Intel |
442 |
KU80L186EC13 |
16-bit high-integration embedded processor. 13 MHz, 3 V |
Intel |
443 |
KU80L188EC13 |
16-bit high-integration embedded processor. 13 MHz, 3 V |
Intel |
444 |
LMV551 |
3 MHz, Micropower RRO Amplifier |
Texas Instruments |
445 |
LMV551MF/NOPB |
3 MHz, Micropower RRO Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
446 |
LMV551MFX/NOPB |
3 MHz, Micropower RRO Amplifier 5-SOT-23 -40 to 125 |
Texas Instruments |
447 |
LMV551MG/NOPB |
3 MHz, Micropower RRO Amplifier 5-SC70 -40 to 125 |
Texas Instruments |
448 |
LMV551MGX/NOPB |
3 MHz, Micropower RRO Amplifier 5-SC70 -40 to 125 |
Texas Instruments |
449 |
LMV552 |
3 MHz, Micropower RRO Amplifier |
Texas Instruments |
450 |
LMV552MM/NOPB |
3 MHz, Micropower RRO Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
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