| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N3320 |
Germanium PNP Transistor |
Motorola |
| 422 |
2N3320 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 423 |
2N5320 |
SWITCHING TRANSISTORS (NPN SILICON) |
Boca Semiconductor Corporation |
| 424 |
2N5320 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 425 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 426 |
2N5320 |
10 Watt NPN-PNP Silicon Power |
Fairchild Semiconductor |
| 427 |
2N5320 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
| 428 |
2N5320 |
Silicon NPN Transistor |
Motorola |
| 429 |
2N5320 |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 430 |
2N5320 |
SMALL SIGNAL NPN TRANSISTORS |
SGS Thomson Microelectronics |
| 431 |
2N5320 |
Professional transistor, general purpose switches |
SGS-ATES |
| 432 |
2N5320 |
SMALL SIGNAL NPN TRANSISTOR |
ST Microelectronics |
| 433 |
2N5320A |
Trans GP BJT NPN 75V 2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 434 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
Nexperia |
| 435 |
2N7002PS |
60 V, 320 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 436 |
2SA1320 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications Color TV Chroma Output Applications |
TOSHIBA |
| 437 |
2SB1320 |
Silicon PNP epitaxial planer type |
Panasonic |
| 438 |
2SB1320A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 439 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 440 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 441 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 442 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 443 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 444 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 445 |
2SC3209 |
NPN SILICON POWER TRANSISTOR |
NEC |
| 446 |
2SC3320 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
| 447 |
2SC3320 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 448 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
| 449 |
2SC4320 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 450 |
2SC5320 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: FT=16GHz series) |
TOSHIBA |
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