No. |
Part Name |
Description |
Manufacturer |
421 |
IS61C632A-8TQ |
8ns; 66MHz; 32 x 32 synchronous pipelined static RAM |
ICSI |
422 |
IS61C632A-8TQI |
8ns; 66MHz; 32 x 32 synchronous pipelined static RAM |
ICSI |
423 |
IS61LV6432-166PQ |
166MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
424 |
IS61LV6432-166TQ |
166MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
425 |
IS61LV6432-8PQ |
66MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
426 |
IS61LV6432-8PQI |
66MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
427 |
IS61LV6432-8TQ |
66MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
428 |
IS61LV6432-8TQI |
66MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
429 |
IS61NW6432-8PQ |
8ns; 66MHz; 3.3V; 64K x 32 synchronous static RAM with No-wait state BUS feature |
ICSI |
430 |
IS61NW6432-8TQ |
8ns; 66MHz; 3.3V; 64K x 32 synchronous static RAM with No-wait state BUS feature |
ICSI |
431 |
IS61S6432-166PQ |
166MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
432 |
IS61S6432-166TQ |
166MHz; 3.3V; 64K x 32 synchronous pipelined static RAM |
ICSI |
433 |
IS61SP12832-166B |
166MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM |
ICSI |
434 |
IS61SP12832-166TQ |
166MHz; 3.3V; 128K x 32 synchoronous pipelined static RAM |
ICSI |
435 |
IS61SP12836-166B |
166MHz; 5V; 128K x 36 synchronous pipelined static RAM |
ICSI |
436 |
IS61SP12836-166TQ |
166MHz; 5V; 128K x 36 synchronous pipelined static RAM |
ICSI |
437 |
IS61SP6464-8PQ |
66MHz; 8ns; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
438 |
IS61SP6464-8TQ |
66MHz; 8ns; 3.3V; 64K x 64 synchronous pipelined static RAM |
ICSI |
439 |
K4R521669A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
440 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
441 |
K4S281632D-TC60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
442 |
K4S281632D-TL60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
443 |
K4S281632E-TCL60 |
128Mb SDRAM, 3.3V, LVTTL, 166MHz |
Samsung Electronic |
444 |
K4S561632E-NC60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
445 |
K4S561632E-NCL60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
446 |
K4S561632E-TCL60 |
16M x 16 SDRAM, LVTTL, 166MHz |
Samsung Electronic |
447 |
K4S641632C-TC10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz |
Samsung Electronic |
448 |
K4S641632C-TC60 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz |
Samsung Electronic |
449 |
K4S641632C-TL10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz |
Samsung Electronic |
450 |
K4S641632C-TL60 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz |
Samsung Electronic |
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