| No. |
Part Name |
Description |
Manufacturer |
| 421 |
M3062AFCVFP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K+4K bytes, RAM capacity = 10K bytes |
Renesas |
| 422 |
M3062AFCVGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K+4K bytes, RAM capacity = 10K bytes |
Renesas |
| 423 |
M3062AMCT-XXXFP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 424 |
M3062AMCT-XXXGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 425 |
M3062AMCV-XXXFP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 426 |
M3062AMCV-XXXGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 427 |
M3062BFCTGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K+4K bytes, RAM capacity = 10K bytes |
Renesas |
| 428 |
M3062BFCVGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K+4K bytes, RAM capacity = 10K bytes |
Renesas |
| 429 |
M3062BMCT-XXXGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 430 |
M3062BMCV-XXXGP |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes |
Renesas |
| 431 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 432 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 433 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 434 |
MTD3302 |
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm |
Motorola |
| 435 |
MTP75N06HD |
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
Motorola |
| 436 |
NTE140A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 10.0V. Zener test current Izt = 25.0mA. |
NTE Electronics |
| 437 |
NTE471 |
Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz |
NTE Electronics |
| 438 |
NTE478 |
Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz |
NTE Electronics |
| 439 |
NTE5019T1 |
Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 10.0V, Zener test current Izt = 5mA. |
NTE Electronics |
| 440 |
NTE5081A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 10.5mA. |
NTE Electronics |
| 441 |
NTE5082A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 25V. Zener test current Izt = 10.0mA. |
NTE Electronics |
| 442 |
NTE5096A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 100V. Zener test current Izt = 2.5mA. |
NTE Electronics |
| 443 |
NTE5125A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 10V. Test current Izt = 125mA. |
NTE Electronics |
| 444 |
NTE5127A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 12V. Test current Izt = 100mA. |
NTE Electronics |
| 445 |
NTE5128A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 13V. Test current Izt = 100mA. |
NTE Electronics |
| 446 |
NTE5129A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 14V. Test current Izt = 100mA. |
NTE Electronics |
| 447 |
NTE5156A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 100V. Test current Izt = 12mA. |
NTE Electronics |
| 448 |
NTE5158A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 120V. Test current Izt = 10mA. |
NTE Electronics |
| 449 |
NTE5159A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 130V. Test current Izt = 10mA. |
NTE Electronics |
| 450 |
NTE5186A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 10V. Zener test current Izt = 250mA. |
NTE Electronics |
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