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Datasheets for AND

Datasheets found :: 231236
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |
No. Part Name Description Manufacturer
421 100304QIX Low Power Quint AND/NAND Gate Fairchild Semiconductor
422 100322QMQB Low power 9- bit buffer. Military grade device with environmental and burn-in processing. National Semiconductor
423 100328QMQB Low power octal ECL/TTL bidirectional translator with latch. Military grade device with environmental and burn-in processing. National Semiconductor
424 100329DMQB Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. National Semiconductor
425 100329FMQB Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. National Semiconductor
426 100329QMQB Low power octal ECL/TTL bidirectional translator with register. Military grade device with environmental and burn-in processing. National Semiconductor
427 100331DMQB Low power triple D flip-flop. Military grade device with environmental and burn-in processing. National Semiconductor
428 100331FMQB Low power triple D flip-flop. Military grade device with environmental and burn-in processing. National Semiconductor
429 100331QMQB Low power triple D flip-flop. Military grade device with environmental and burn-in processing. National Semiconductor
430 100364DMQB Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. National Semiconductor
431 100364FMQB Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. National Semiconductor
432 100364QMQB Low power 16-input multiplexer. Military grade device with environmental and burn-in processing. National Semiconductor
433 100371QMQB Low power triple 4-input multiplexer with enable. Military grade device with environmental and burn-in processing. National Semiconductor
434 101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER SGS Thomson Microelectronics
435 101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER ST Microelectronics
436 1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
437 1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
438 1011-055 High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications SGS Thomson Microelectronics
439 1011-055 High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications SGS Thomson Microelectronics
440 1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
441 1011-225 High power Class C transistor designed for L-Band Avionics applications SGS Thomson Microelectronics
442 1011-350 High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications SGS Thomson Microelectronics
443 10117 Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
444 10117 Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
445 10117B Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
446 10117B Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
447 10117F Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
448 10117F Dual 2-Wide 2,3-Input OR-AND/OR-AND-INVERT Gate Signetics
449 10118 Dual 2-Wide 3,3-Input OR-AND Gate Signetics
450 10118B Dual 2-Wide 3,3-Input OR-AND Gate Signetics


Datasheets found :: 231236
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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