| No. |
Part Name |
Description |
Manufacturer |
| 421 |
EP7312-IV |
High-performance, low-power system on chip with SDRAM and enchanced digital audio interface |
Cirrus Logic |
| 422 |
EP7312-IV-90 |
High-performance, low-power system on chip with SDRAM and enchanced digital audio interface |
Cirrus Logic |
| 423 |
EP7312-IV-C |
High-performance, low-power system on chip with SDRAM and enchanced digital audio interface |
Cirrus Logic |
| 424 |
FMB857B |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
| 425 |
GLT44032-E |
128k x 32 embedded EDO DRAM macro |
G-LINK Technology |
| 426 |
GLT5640L32 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 427 |
GLT5640L32-10 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 428 |
GLT5640L32-5 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 429 |
GLT5640L32-5.5 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 430 |
GLT5640L32-6 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 431 |
GLT5640L32-7 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 432 |
GLT5640L32-8 |
CMOS Synchronous DRAM 2M x 32 SDRAM |
etc |
| 433 |
GM71C17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 434 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 435 |
GM71C17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 436 |
GM71C17403CLJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
| 437 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 438 |
GM71C17403CLJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
| 439 |
GM71C17403CLT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
| 440 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 441 |
GM71C17403CLT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
| 442 |
GM71C17403CT-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 443 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 444 |
GM71C17403CT-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 445 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
| 446 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
| 447 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
| 448 |
GM71C17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
| 449 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
| 450 |
GM71C17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
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