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Datasheets for E 150

Datasheets found :: 1341
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |
No. Part Name Description Manufacturer
421 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
422 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
423 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
424 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
425 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
426 IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
427 IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
428 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
429 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
430 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
431 IRF623 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
432 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
433 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
434 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
435 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
436 ISO721M Single 150Mbps Digital Isolator Texas Instruments
437 ISO721M-EP Enhanced Product Single 150Mbps Digital Isolator Texas Instruments
438 ISO721MD Single 150Mbps Digital Isolator 8-SOIC -40 to 125 Texas Instruments
439 ISO721MDG4 Single 150Mbps Digital Isolator 8-SOIC -40 to 125 Texas Instruments
440 ISO721MDR Single 150Mbps Digital Isolator 8-SOIC -40 to 125 Texas Instruments
441 ISO721MDRG4 Single 150Mbps Digital Isolator 8-SOIC -40 to 125 Texas Instruments
442 ISO721MMDREP Enhanced Product Single 150Mbps Digital Isolator 8-SOIC -55 to 125 Texas Instruments
443 ISO721MMDREPG4 Enhanced Product Single 150Mbps Digital Isolator 8-SOIC -55 to 125 Texas Instruments
444 ISO722M Single 150Mbps Digital Isolator with Enable Texas Instruments
445 ISO722MD Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 Texas Instruments
446 ISO722MDR Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 Texas Instruments
447 ISO722MDRG4 Single 150Mbps Digital Isolator with Enable 8-SOIC -40 to 125 Texas Instruments
448 LA311 Photocoupler. I/O breakdown voltage 1500 Vrms. Letex Technology
449 LP3999 Low Noise 150mA Voltage Regulator for RF/Analog Applications. National Semiconductor
450 LP3999 Low Noise 150mA Voltage Regulator for RF/Analog Applications. Texas Instruments


Datasheets found :: 1341
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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