| No. |
Part Name |
Description |
Manufacturer |
| 421 |
1N6303 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 422 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 423 |
1N914UR |
PERFORMANCE SPECIFICATION |
Microsemi |
| 424 |
1S10 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 425 |
1S2 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 426 |
1S3 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 427 |
1S4 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 428 |
1S6 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 429 |
1S8 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 430 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 431 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 432 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 433 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 434 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 435 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 436 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 437 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 438 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
| 439 |
2SA429 |
Industrial Transistor Specification Table |
TOSHIBA |
| 440 |
2SA467 |
Industrial Transistor Specification Table |
TOSHIBA |
| 441 |
2SA49 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 442 |
2SA494 |
Industrial Transistor Specification Table |
TOSHIBA |
| 443 |
2SA495 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 444 |
2SA495 |
Industrial Transistor Specification Table |
TOSHIBA |
| 445 |
2SA499 |
Industrial Transistor Specification Table |
TOSHIBA |
| 446 |
2SA500 |
Industrial Transistor Specification Table |
TOSHIBA |
| 447 |
2SA502 |
Industrial Transistor Specification Table |
TOSHIBA |
| 448 |
2SA503 |
Industrial Transistor Specification Table |
TOSHIBA |
| 449 |
2SA504 |
Industrial Transistor Specification Table |
TOSHIBA |
| 450 |
2SA510 |
Industrial Transistor Specification Table |
TOSHIBA |
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