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Datasheets for ENT B

Datasheets found :: 1841
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No. Part Name Description Manufacturer
421 KBPC5010 50 A high current bridge rectifier. Max reccurent peak reverse voltage 1000 V. Comchip Technology
422 KBPC5010 40, 50A HIGH CURRENT BRIDGE RECTIFIER Won-Top Electronics
423 KBPC5010P 40, 50A HIGH CURRENT BRIDGE RECTIFIER Won-Top Electronics
424 KBPC5010PW 40, 50A HIGH CURRENT BRIDGE RECTIFIER Won-Top Electronics
425 KBPC5010W 40, 50A HIGH CURRENT BRIDGE RECTIFIER Won-Top Electronics
426 KM416RD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
427 KM416RD16AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
428 KM416RD16AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
429 KM416RD16C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
430 KM416RD2AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
431 KM416RD2AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
432 KM416RD2C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
433 KM416RD2D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
434 KM416RD32AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
435 KM416RD32AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
436 KM416RD32C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
437 KM416RD32D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
438 KM416RD4AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
439 KM416RD4AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
440 KM416RD4C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
441 KM416RD4D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
442 KM416RD8AC(D)-RK70 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
443 KM416RD8AC(D)-RK80 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
444 KM416RD8AC(DB)-RCG60 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
445 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
446 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
447 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
448 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
449 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
450 KM416RD8AD-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic


Datasheets found :: 1841
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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