| No. |
Part Name |
Description |
Manufacturer |
| 421 |
N74F2952N |
Registered transceiver, non-inverting 3-State |
Philips |
| 422 |
N74F2953A |
Registered transceiver, non-inverting 3-State |
Philips |
| 423 |
N74F2953D |
Registered transceiver, non-inverting 3-State |
Philips |
| 424 |
N74F2953N |
Registered transceiver, non-inverting 3-State |
Philips |
| 425 |
N74F298D |
Quad 2-input multiplexer with storage |
NXP Semiconductors |
| 426 |
N74F298D |
Quad 2-input multiplexer with storage |
Philips |
| 427 |
N74F298N |
Quad 2-input multiplexer with storage |
NXP Semiconductors |
| 428 |
N74F298N |
Quad 2-input multiplexer with storage |
Philips |
| 429 |
N74F299D |
8-bit universal shift/storage register (3-State) |
NXP Semiconductors |
| 430 |
N74F299D |
8-bit universal shift/storage register 3-State |
Philips |
| 431 |
N74F299DB |
8-bit universal shift/storage register 3-State |
Philips |
| 432 |
N74F299N |
8-bit universal shift/storage register (3-State) |
NXP Semiconductors |
| 433 |
N74F299N |
8-bit universal shift/storage register 3-State |
Philips |
| 434 |
NJM286XF29 |
Ultra Low Noise Low Dropout Voltage Regulator |
New Japan Radio |
| 435 |
NJU7241F29 |
High-Precision LDO 60mA C-MOS Voltage Regulator with Standby |
New Japan Radio |
| 436 |
NJU7250F29 |
Low Dropout Voltage Regulator |
New Japan Radio |
| 437 |
NTF2955 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 438 |
NTF2955T1 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 439 |
NTF2955T1G |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 440 |
NTF2955T3 |
Power MOSFET |
ON Semiconductor |
| 441 |
NUF2900MN |
Two Line EMI Filter with ESD Protection for High Speed Data Interface |
ON Semiconductor |
| 442 |
NX8562LF295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode floating. FC-PC connector. |
NEC |
| 443 |
NX8563LF295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1525.55 nm. Frequency 196.00 THz. FC-PC connector. Anode floating. |
NEC |
| 444 |
PB-IRF2903ZL |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 445 |
PB-IRF2903ZS |
Leaded 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 446 |
PB-IRF2907ZL |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 447 |
PB-IRF2907ZS |
Leaded 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 448 |
PMF290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 449 |
PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 450 |
PMF290XN |
PMF290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
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