No. |
Part Name |
Description |
Manufacturer |
421 |
2N5109 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
422 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
423 |
2N5835 |
NPN silicon high frequency transistor 2.5GHz - 10mAdc |
Motorola |
424 |
2N5836 |
NPN silicon high frequency transistor 2.0GHz - 50mAdc |
Motorola |
425 |
2N5837 |
NPN silicon high frequency transistor 1.7GHz - 100mAdc |
Motorola |
426 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
427 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
428 |
2N5943 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
429 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
430 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
431 |
2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
432 |
2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
433 |
2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
434 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
435 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
436 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
437 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
438 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
439 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
440 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
441 |
2N6604 |
NPN silicon high frequency transistor NF=2.7dB - 1.0GHz |
Motorola |
442 |
2SA1978-T1B |
fT=4GHz PNP Bip Tr |
NEC |
443 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
444 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
445 |
2SC3541 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL130681-12 is also the datasheet of 2SC3541, see the Electrical Characteristics table) |
NEC |
446 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
447 |
2SC3838 |
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz) |
ROHM |
448 |
2SC5226A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP |
ON Semiconductor |
449 |
2SC5227A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single CP |
ON Semiconductor |
450 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
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