| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N3045 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 422 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 423 |
2N3046 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 424 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 425 |
2N3047 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 426 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 427 |
2N3048 |
DUAL AMPLIFIER TRANSISTOR |
Motorola |
| 428 |
2N3048 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 429 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 430 |
2N3049 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 431 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 432 |
2N3050 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 433 |
2N3051 |
PNP differential amplifiers - silicon transistor |
Sprague |
| 434 |
2N3052 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 435 |
2N3053 |
NPN small signal general purpose amplifier. |
Fairchild Semiconductor |
| 436 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 437 |
2N3053 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
| 438 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 439 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 440 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 441 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 442 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 443 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 444 |
2N3055 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 445 |
2N3055 |
Silicon HOMETAXIAL NPN transistor, AF output amplifier |
SGS-ATES |
| 446 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 447 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 448 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 449 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 450 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
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