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Datasheets for OS

Datasheets found :: 509
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 |
No. Part Name Description Manufacturer
421 SMA460 3.3 V, +/-100 ppm, CMOS crystal clock oscillator NEL Frequency Controls
422 SMA461 3.3 V, +/-50 ppm, CMOS crystal clock oscillator NEL Frequency Controls
423 SMA467 3.3 V, +/-25 ppm, CMOS crystal clock oscillator NEL Frequency Controls
424 SMA469 3.3 V, customer specific, CMOS crystal clock oscillator NEL Frequency Controls
425 STLVDS47BD 3V LVDS QUAD CMOS DIFFERENTIAL LINE DRIVER ST Microelectronics
426 STLVDS47BDR 3V LVDS QUAD CMOS DIFFERENTIAL LINE DRIVER ST Microelectronics
427 STLVDS47BTR 3V LVDS QUAD CMOS DIFFERENTIAL LINE DRIVER ST Microelectronics
428 TC528128BJ-10 100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
429 TC528128BJ-80 80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
430 TC528128BZ-10 100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
431 TC528128BZ-80 80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM TOSHIBA
432 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
433 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
434 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
435 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
436 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
437 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
438 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
439 TD310 TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE ST Microelectronics
440 TD310ID TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE ST Microelectronics
441 TD310IDT TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE ST Microelectronics
442 TD310IN TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE ST Microelectronics
443 TDA7294HS 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ST Microelectronics
444 TDA7294S 100V -100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ST Microelectronics
445 TDA7294V 100V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY ST Microelectronics
446 TL16C2550IPFBG4 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP -40 to 85 Texas Instruments
447 TL16C2550IPFBRG4 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP -40 to 85 Texas Instruments
448 TL16C2550IRHB 1.8-V to 5-V Dual UART with 16-Byte FIFOs 32-VQFN -40 to 85 Texas Instruments
449 TL16C2550IRHBG4 1.8-V to 5-V Dual UART with 16-Byte FIFOs 32-VQFN -40 to 85 Texas Instruments
450 TL16C2550IRHBR 1.8-V to 5-V Dual UART with 16-Byte FIFOs 32-VQFN -40 to 85 Texas Instruments


Datasheets found :: 509
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 |



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