| No. |
Part Name |
Description |
Manufacturer |
| 421 |
APX9142AEE-PB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 422 |
APX9142AEE-TB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 423 |
APX9142AEE-TR |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 424 |
APX9142ATEE-PB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 425 |
APX9142ATEE-TB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 426 |
APX9142ATEE-TR |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 427 |
APX9142BEE-PB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 428 |
APX9142BEE-TB |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 429 |
APX9142BEE-TR |
High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection |
ANPEC Electronics Corporation |
| 430 |
AQY210KSX |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 431 |
AQY210KSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
| 432 |
AT24C02A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 433 |
AT24C04A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 434 |
AT24C08A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 435 |
AT24C16A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 436 |
AT28BV256 |
256K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt |
Atmel |
| 437 |
AT28BV64B |
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt |
Atmel |
| 438 |
AT28BV64B-20JC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 439 |
AT28BV64B-20JI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 440 |
AT28BV64B-20PC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 441 |
AT28BV64B-20PI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 442 |
AT28BV64B-20SC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 443 |
AT28BV64B-20SI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 444 |
AT28BV64B-20TC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 445 |
AT28BV64B-20TI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 446 |
AT28BV64B-25JC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 447 |
AT28BV64B-25JI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 448 |
AT28BV64B-25PC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 449 |
AT28BV64B-25PI |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
| 450 |
AT28BV64B-25SC |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection |
Atmel |
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