| No. |
Part Name |
Description |
Manufacturer |
| 421 |
29C021TI-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 422 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 423 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 424 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 425 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 426 |
29C021TM-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 427 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 428 |
29C021TM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 429 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 430 |
2FI100A-030 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 431 |
2FI100A-060 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 432 |
2FI100F-030 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 433 |
2FI100F-060 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 434 |
2FI100G-100 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 435 |
2FWJ42N |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 436 |
2GWJ42 |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 437 |
2GWJ42C |
SCHOTTKY BARRIER RECTIFIER HIGH SPEED RECTIFIER APPLICATIONS |
TOSHIBA |
| 438 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 439 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 440 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 441 |
2N1300 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 442 |
2N1301 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 443 |
2N1305 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 444 |
2N1307 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 445 |
2N1309 |
Germanium PNP transistor, medium speed switching |
SESCOSEM |
| 446 |
2N1499A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 447 |
2N1499B |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 448 |
2N1500 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 449 |
2N1613 |
Silicon NPN Planar Transistor for RF amplifiers and high speed switches |
AEG-TELEFUNKEN |
| 450 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
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