| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 422 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 423 |
2SC2999 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 424 |
2SC3000 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 425 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 426 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 427 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 428 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 429 |
2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 430 |
2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 431 |
2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 432 |
2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 433 |
2SC3022 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 434 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 435 |
2SC3064 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 436 |
2SC3065 |
NPN Epitaxial Planar Silicon CompositeTransistor |
SANYO |
| 437 |
2SC3067 |
NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONS |
SANYO |
| 438 |
2SC3068 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 439 |
2SC3069 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 440 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 441 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 442 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 443 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 444 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 445 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 446 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 447 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 448 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 449 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 450 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
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