No. |
Part Name |
Description |
Manufacturer |
421 |
IDT70825S45G |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
422 |
IDT70825S45GB |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
423 |
IDT70825S45PF |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
424 |
IDT70825S45PFB |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM��) |
IDT |
425 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
426 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
427 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
428 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
429 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
430 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
431 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
432 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
433 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
434 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
435 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
436 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
437 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
438 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
439 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
440 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
441 |
MB8264A |
MOS 65536-bit Dynamic Random Access Memory |
Fujitsu Microelectronics |
442 |
MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory) |
Fuji Electric |
443 |
MB85R256PF |
Memory FRAM(Ferroelectric Random Access Memory) |
Fuji Electric |
444 |
MB85R256PFTN |
Memory FRAM(Ferroelectric Random Access Memory) |
Fuji Electric |
445 |
MBM2212-20 |
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
Fujitsu Microelectronics |
446 |
MBM2212-25 |
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |
Fujitsu Microelectronics |
447 |
MC1170L |
64-BIT RANDOM ACCESS MEMORY |
Motorola |
448 |
MCM101524 |
1M x 4 Bit Fast Static Random Access Memory with ECL I/O |
Motorola |
449 |
MCM101524B12 |
1M x 4 Bit Fast Static Random Access Memory with ECL I/O |
Motorola |
450 |
MCM101524B15 |
1M x 4 Bit Fast Static Random Access Memory with ECL I/O |
Motorola |
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