No. |
Part Name |
Description |
Manufacturer |
421 |
AT60142ET-DC20SSB |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
422 |
AT60142ET-DC20SSV |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
423 |
AT60142ET-DD17M-E |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
424 |
AT60142ET-DD17MMQ |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
425 |
AT60142ET-DD17SMS |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
426 |
AT60142ET-DD20M-E |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
427 |
AT60142ET-DD20MMQ |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
428 |
AT60142ET-DD20SMS |
Rad Hard 512K x 8 Very Low Power CMOS SRAM |
Atmel |
429 |
AUIR3200S |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
430 |
AUIR3200STR |
High side mosfet driver for very low Rdson automotive application with over-current, over-temperature protection and diagnostic. |
International Rectifier |
431 |
AUIR3240S |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
432 |
AUIR3240STR |
High Side MOSFET Driver for Battery Switch Application where a very Low Quiescent Current is Required |
International Rectifier |
433 |
BA145 |
Fast recovery low power rectifier diode |
Mullard |
434 |
BA148 |
Fast recovery low power rectifier diode |
Mullard |
435 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
436 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
437 |
BA6129AF |
Memory LSIs |
ROHM |
438 |
BA6162/F |
Memory LSIs |
ROHM |
439 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
440 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
441 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
442 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
443 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
444 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
445 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
446 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
447 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
448 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
449 |
BAT30 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
450 |
BAW32A |
Silicon signal diode - very low capacitance - general purpose |
SESCOSEM |
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