| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2-BD131 |
N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 422 |
20DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 423 |
20DL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 424 |
20DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 425 |
20DL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 426 |
20FL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 427 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 428 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 429 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 430 |
20GL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 431 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 432 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 433 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 434 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 435 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 436 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 437 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 438 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 439 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 440 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 441 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 442 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 443 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 444 |
2N1613 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 445 |
2N1613 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 446 |
2N1613A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 447 |
2N1711 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 448 |
2N1711 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 449 |
2N1711 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 450 |
2N1711A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
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