No. |
Part Name |
Description |
Manufacturer |
421 |
NMC27C64Q250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
422 |
NMC27C64Q300 |
300 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
423 |
NMC27C64QE150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
424 |
NMC27C64QE200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
425 |
NMC27C64QM200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
426 |
NMC27C64QM250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
427 |
NTE2716 |
Integrated Circuit NMOS, 16K UV Erasable PROM |
NTE Electronics |
428 |
NTE2732A |
Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM |
NTE Electronics |
429 |
SMJ27C010A-12JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
430 |
SMJ27C010A-15JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
431 |
SMJ27C010A-20JM |
1Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
432 |
SMJ27C040-12JM |
4Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
433 |
SMJ27C040-15JM |
4Meg UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
434 |
SMJ27C256-15JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
435 |
SMJ27C256-17JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
436 |
SMJ27C256-20JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
437 |
SMJ27C256-25JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
438 |
SMJ27C256-30JM |
256K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
439 |
SMJ27C512 |
512K UVEPROM UV Erasable Programmable Read-Only Memory |
Austin Semiconductor |
440 |
SMJ27C512-15JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
441 |
SMJ27C512-20JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
442 |
SMJ27C512-25JM |
512K UVEPROM; UV erasable programmable read-only memory |
Austin Semiconductor |
443 |
ST27C1001 |
1024K CMOS UV Erasable PROM |
ST Microelectronics |
444 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
445 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
446 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
447 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
448 |
TMS27C/PC256-10 |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
449 |
TMS27C/PC256-12 |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
450 |
TMS27C/PC256-15 |
TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES |
Texas Instruments |
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