| No. |
Part Name |
Description |
Manufacturer |
| 421 |
UF3010 |
1000 V, 3 A, ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 422 |
UF301G |
100 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 423 |
UF302 |
200 V, 3 A, ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 424 |
UF302G |
200 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 425 |
UF304 |
400 V, 3 A, ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 426 |
UF304G |
400 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 427 |
UF306 |
600 V, 3 A, ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 428 |
UF306G |
600 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 429 |
UF308 |
800 V, 3 A, ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 430 |
UF308G |
800 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 431 |
UF5400 |
50 V, 3 A ultra-fast silicon rectifier |
Invac |
| 432 |
UF5401 |
100 V, 3 A ultra-fast silicon rectifier |
Invac |
| 433 |
UF5402 |
200 V, 3 A ultra-fast silicon rectifier |
Invac |
| 434 |
UF5404 |
400 V, 3 A ultra-fast silicon rectifier |
Invac |
| 435 |
UF5406 |
600 V, 3 A ultra-fast silicon rectifier |
Invac |
| 436 |
UF5407 |
800 V, 3 A ultra-fast silicon rectifier |
Invac |
| 437 |
UF5408 |
1000 V, 3 A ultra-fast silicon rectifier |
Invac |
| 438 |
VN0104N3 |
40 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 439 |
VN0104ND |
40 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 440 |
VN0106N3 |
60 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 441 |
VN0106ND |
60 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 442 |
VN0109N3 |
90 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 443 |
VN0109ND |
90 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| | | |
