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Datasheets for W-N

Datasheets found :: 6063
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No. Part Name Description Manufacturer
421 BC849 Low-Noise-Transistors - VCEO=30V; ICM=200 mA Infineon
422 BCW61 Low-Noise-Transistors - SOT23 Infineon
423 BCY66 NPN transistor for low-noise LF preamplifiers Siemens
424 BCY67 PNP transistor for low-noise LF preamplifiers Siemens
425 BCY77 PNP transistors for low-noise NF pre- and driver stages Siemens
426 BCY77IX PNP transistors for low-noise NF pre- and driver stages Siemens
427 BCY77VII PNP transistors for low-noise NF pre- and driver stages Siemens
428 BCY77VIII PNP transistors for low-noise NF pre- and driver stages Siemens
429 BCY78 PNP transistors for low-noise NF pre- and driver stages Siemens
430 BCY78IX PNP transistors for low-noise NF pre- and driver stages Siemens
431 BCY78VII PNP transistors for low-noise NF pre- and driver stages Siemens
432 BCY78VIII PNP transistors for low-noise NF pre- and driver stages Siemens
433 BCY78X PNP transistors for low-noise NF pre- and driver stages Siemens
434 BCY79 PNP transistors for low-noise NF pre- and driver stages Siemens
435 BCY79IX PNP transistors for low-noise NF pre- and driver stages Siemens
436 BCY79VII PNP transistors for low-noise NF pre- and driver stages Siemens
437 BCY79VIII PNP transistors for low-noise NF pre- and driver stages Siemens
438 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
439 BF2000W Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
440 BF410 LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Siemens
441 BF410A LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Siemens
442 BF410B LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Siemens
443 BF410C LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Siemens
444 BF410D LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS Siemens
445 BF414 NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) Siemens
446 BF998 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
447 BFP181 RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Infineon
448 BFP181R RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Infineon
449 BFP183 RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Infineon
450 BFP183W RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Infineon


Datasheets found :: 6063
Page: | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 | 19 |



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