No. |
Part Name |
Description |
Manufacturer |
421 |
BC849 |
Low-Noise-Transistors - VCEO=30V; ICM=200 mA |
Infineon |
422 |
BCW61 |
Low-Noise-Transistors - SOT23 |
Infineon |
423 |
BCY66 |
NPN transistor for low-noise LF preamplifiers |
Siemens |
424 |
BCY67 |
PNP transistor for low-noise LF preamplifiers |
Siemens |
425 |
BCY77 |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
426 |
BCY77IX |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
427 |
BCY77VII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
428 |
BCY77VIII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
429 |
BCY78 |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
430 |
BCY78IX |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
431 |
BCY78VII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
432 |
BCY78VIII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
433 |
BCY78X |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
434 |
BCY79 |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
435 |
BCY79IX |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
436 |
BCY79VII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
437 |
BCY79VIII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
438 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
439 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
440 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
441 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
442 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
443 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
444 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
445 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
446 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
447 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
448 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
449 |
BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
450 |
BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
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