| No. |
Part Name |
Description |
Manufacturer |
| 421 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
| 422 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
| 423 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
| 424 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
| 425 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
| 426 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
| 427 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 428 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 429 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 430 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 431 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 432 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 433 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 434 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 435 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 436 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 437 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 438 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 439 |
HYB3116160BSJ |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 440 |
HYB3116160BSJ-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 441 |
HYB3116160BSJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 442 |
HYB3116160BSJ-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 443 |
HYB3116160BST-50 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 444 |
HYB3116160BST-60 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 445 |
HYB3116160BST-70 |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
Siemens |
| 446 |
HYB3116405BJ-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 447 |
HYB3116405BJ-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 448 |
HYB3116405BT-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 449 |
HYB3116405BT-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 450 |
HYB3116405BTL-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| | | |
