No. |
Part Name |
Description |
Manufacturer |
4231 |
IRFP913X |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
4232 |
IRFP9140 |
100 V, P-channel power MOSFET |
Samsung Electronic |
4233 |
IRFP9141 |
60 V, P-channel power MOSFET |
Samsung Electronic |
4234 |
IRFP9142 |
100 V, P-channel power MOSFET |
Samsung Electronic |
4235 |
IRFP9143 |
60 V, P-channel power MOSFET |
Samsung Electronic |
4236 |
IRFP9230 |
200 V, P-channel power MOSFET |
Samsung Electronic |
4237 |
IRFP9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
4238 |
IRFP9232 |
200 V, P-channel power MOSFET |
Samsung Electronic |
4239 |
IRFP9233 |
150 V, P-channel power MOSFET |
Samsung Electronic |
4240 |
IRFP9240 |
200 V, P-channel power MOSFET |
Samsung Electronic |
4241 |
IRFP9241 |
150 V, P-channel power MOSFET |
Samsung Electronic |
4242 |
IRFP9242 |
200 V, P-channel power MOSFET |
Samsung Electronic |
4243 |
IRFP9243 |
150 V, P-channel power MOSFET |
Samsung Electronic |
4244 |
IRFR010 |
N Channel Power MOSFETs |
Samsung Electronic |
4245 |
IRLZ40 |
N-CHANNEL LOGIC LEVEL MOSFET |
Samsung Electronic |
4246 |
IRLZ44A |
ADVANCED POWER MOSFET |
Samsung Electronic |
4247 |
ISL9860PF2 |
8A, 600V Stealth Diode |
Samsung Electronic |
4248 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
4249 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
4250 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
4251 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
4252 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
4253 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
4254 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
4255 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
4256 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
4257 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
4258 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
4259 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
4260 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
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