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Datasheets for OELECTRO

Datasheets found :: 113963
Page: | 138 | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 |
No. Part Name Description Manufacturer
4231 AM81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
4232 AM81416-020 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
4233 AM81719-030 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4234 AM81719-030 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
4235 AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS SGS Thomson Microelectronics
4236 AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS ST Microelectronics
4237 AM81720-012 COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4238 AM81720-012 COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
4239 AM81720-020 Transistor for communications applications SGS Thomson Microelectronics
4240 AM81922-018 Transistor for communications applications SGS Thomson Microelectronics
4241 AM82022-020 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
4242 AM82023-010 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
4243 AM82023-016 Transistor designed specifically for Telemetry and Communications applications SGS Thomson Microelectronics
4244 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4245 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
4246 AM82223-010 TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
4247 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4248 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4249 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4250 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
4251 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
4252 AM82325-040 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
4253 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4254 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4255 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4256 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
4257 AM82729-030 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4258 AM82729-060 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
4259 AM82731-001 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
4260 AM82731-003 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics


Datasheets found :: 113963
Page: | 138 | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 |



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