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Datasheets for 536

Datasheets found :: 4748
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |
No. Part Name Description Manufacturer
4261 TC531024F-15 150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM TOSHIBA
4262 TC531024P-12 120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM TOSHIBA
4263 TC531024P-15 150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM TOSHIBA
4264 TC54H1024F-10 100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory TOSHIBA
4265 TC54H1024F-85 85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory TOSHIBA
4266 TC54H1024P-10 100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory TOSHIBA
4267 TC54H1024P-85 85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory TOSHIBA
4268 TC551664AJ 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4269 TC551664AJ-15 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4270 TC551664AJ-20 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4271 TC551664BFT-12 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4272 TC551664BFT-15 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4273 TC551664BJ 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4274 TC551664BJ-12 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4275 TC551664BJ-15 65,536-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA
4276 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4277 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4278 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4279 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4280 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4281 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4282 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
4283 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4284 TC5565AFL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4285 TC5565AFL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4286 TC5565AFL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4287 TC5565APL 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4288 TC5565APL-10 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4289 TC5565APL-12 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA
4290 TC5565APL-15 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology TOSHIBA


Datasheets found :: 4748
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |



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