No. |
Part Name |
Description |
Manufacturer |
4261 |
BF-U81DRD |
SINGLE DIGIT LED DISPLAYS |
Yellow Stone Corp |
4262 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
4263 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
4264 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
4265 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
4266 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
4267 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
4268 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
4269 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
4270 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
4271 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
4272 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
4273 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
4274 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
4275 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
4276 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
4277 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
4278 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
4279 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
4280 |
BFT31 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. |
SemeLAB |
4281 |
BFT32 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
4282 |
BFT53 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
4283 |
BFT57 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
4284 |
BFT59 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
4285 |
BFT60 |
Bipolar NPN Device in A Hermetically sealed TO39 Metal Package |
SemeLAB |
4286 |
BFW44 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
4287 |
BFX37 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
4288 |
BFX84 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
4289 |
BFX87 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
4290 |
BFY76 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
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