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Datasheets for LED

Datasheets found :: 43252
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |
No. Part Name Description Manufacturer
4261 BF-U81DRD SINGLE DIGIT LED DISPLAYS Yellow Stone Corp
4262 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
4263 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
4264 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
4265 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
4266 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
4267 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
4268 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
4269 BF166 Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier SGS-ATES
4270 BF2000W Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
4271 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
4272 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
4273 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
4274 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
4275 BF509 Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier SGS-ATES
4276 BF509S Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier SGS-ATES
4277 BF961 Dual gate, discharge mode, MOS field controlled tetrode Mikroelektronikai Vallalat
4278 BF998 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
4279 BFQ23C Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope Philips
4280 BFT31 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. SemeLAB
4281 BFT32 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package SemeLAB
4282 BFT53 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB
4283 BFT57 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB
4284 BFT59 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB
4285 BFT60 Bipolar NPN Device in A Hermetically sealed TO39 Metal Package SemeLAB
4286 BFW44 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package SemeLAB
4287 BFX37 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package SemeLAB
4288 BFX84 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package SemeLAB
4289 BFX87 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package SemeLAB
4290 BFY76 Bipolar NPN Device in a Hermetically sealed TO18 Metal Package SemeLAB


Datasheets found :: 43252
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |



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