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Datasheets for POWER SUPP

Datasheets found :: 27163
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |
No. Part Name Description Manufacturer
4261 JPS250PS24C Switching power supply. Max. power 250 W. Output voltage 24 V. Output current: 10.4 A (with 18 CFM); 8.5 A (convection cooled). International Power Sources
4262 JPS250PS48 Switching power supply. Max. power 250 W. Output voltage 48 V. Output current: 5.2 A (with 18 CFM); 4.3 A (convection cooled). International Power Sources
4263 JPS250PS48C Switching power supply. Max. power 250 W. Output voltage 48 V. Output current: 5.2 A (with 18 CFM); 4.3 A (convection cooled). International Power Sources
4264 K4E641612B-TC45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Samsung Electronic
4265 K4E641612B-TC50 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Samsung Electronic
4266 K4E641612B-TC60 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Samsung Electronic
4267 K4E641612B-TL45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Samsung Electronic
4268 K4E641612B-TL50 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Samsung Electronic
4269 K4E641612B-TL60 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Samsung Electronic
4270 K4E661612B-TC45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns Samsung Electronic
4271 K4E661612B-TC50 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns Samsung Electronic
4272 K4E661612B-TC60 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns Samsung Electronic
4273 K4E661612B-TL45 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power Samsung Electronic
4274 K4E661612B-TL50 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power Samsung Electronic
4275 K4E661612B-TL60 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power Samsung Electronic
4276 K4F641612B-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
4277 K4F641612B-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
4278 K4F641612B-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
4279 K4F641612B-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic
4280 K4F641612B-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
4281 K4F641612C-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
4282 K4F641612C-TC50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns Samsung Electronic
4283 K4F641612C-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
4284 K4F641612C-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
4285 K4F641612C-TL60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power Samsung Electronic
4286 K4F661612B-TC45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns Samsung Electronic
4287 K4F661612B-TC50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns Samsung Electronic
4288 K4F661612B-TC60 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns Samsung Electronic
4289 K4F661612B-TL45 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power Samsung Electronic
4290 K4F661612B-TL50 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power Samsung Electronic


Datasheets found :: 27163
Page: | 139 | 140 | 141 | 142 | 143 | 144 | 145 | 146 | 147 |



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