| No. |
Part Name |
Description |
Manufacturer |
| 4291 |
2N2990 |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 4292 |
2N2992 |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 4293 |
2N2992A |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 4294 |
2N2994 |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
| 4295 |
2N3007 |
Trans GP BJT 100V 0.35A 3-Pin TO-18 |
New Jersey Semiconductor |
| 4296 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 4297 |
2N3029 |
Thyristor SCR 100V 8A 3-Pin TO-18 |
New Jersey Semiconductor |
| 4298 |
2N3029B |
Thyristor SCR 100V 8A 3-Pin TO-18 |
New Jersey Semiconductor |
| 4299 |
2N3055 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 4300 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 4301 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 4302 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4303 |
2N3056 |
NPN power transistor, 100V, 15A |
SemeLAB |
| 4304 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 4305 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 4306 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 4307 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4308 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4309 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4310 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4311 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4312 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 4313 |
2N340 |
Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4314 |
2N341 |
Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4315 |
2N342 |
Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4316 |
2N343 |
Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 4317 |
2N3442 |
Power 10A 140V Discrete NPN |
ON Semiconductor |
| 4318 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 4319 |
2N3498 |
Trans GP BJT NPN 100V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 4320 |
2N3498A |
Trans GP BJT NPN 100V 0.5A 3-Pin TO-39 |
New Jersey Semiconductor |
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