No. |
Part Name |
Description |
Manufacturer |
4291 |
HY29LV800B-70 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4292 |
HY29LV800B-70I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4293 |
HY29LV800B-90 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4294 |
HY29LV800B-90I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4295 |
HY29LV800T-55 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4296 |
HY29LV800T-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4297 |
HY29LV800T-70 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4298 |
HY29LV800T-70I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4299 |
HY29LV800T-90 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4300 |
HY29LV800T-90I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
4301 |
IRMCF143 |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4302 |
IRMCF143S |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4303 |
IRMCF143STR |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4304 |
IRMCF143TY |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4305 |
IRMCF171 |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4306 |
IRMCF171TR |
High Performance Appliance Flash Memory Based Motion Control IC |
International Rectifier |
4307 |
ISD-T360 |
VoiceDSP Digital Speech Processor with Master/Slave, Full-Duplex Speakerphone, Multiple Flash and ARAM/DRAM Support |
etc |
4308 |
ISD-T360SB |
VoiceDSP Digital Speech Processor with Master/Slave, Full-Duplex Speakerphone, Multiple Flash ARAM/DRAM |
Information Storage Devices |
4309 |
KM75C104A |
CMOS FIFO WITH PROGRAMMABLE FLAG |
Samsung Electronic |
4310 |
KM75C104A-20 |
CMOS FIFO WITH PROGRAMMABLE FLAG |
Samsung Electronic |
4311 |
KM75C104A-25 |
CMOS FIFO WITH PROGRAMMABLE FLAG |
Samsung Electronic |
4312 |
KM75C104A-35 |
CMOS FIFO WITH PROGRAMMABLE FLAG |
Samsung Electronic |
4313 |
KM75C104AHJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4314 |
KM75C104AHJ-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4315 |
KM75C104AHJ-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4316 |
KM75C104AHJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4317 |
KM75C104AHJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4318 |
KM75C104AHJI-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4319 |
KM75C104AHJI-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
4320 |
KM75C104AHJI-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
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