| No. |
Part Name |
Description |
Manufacturer |
| 4291 |
2SC1622A-L |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 4292 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 4293 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 4294 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 4295 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 4296 |
2SC1656 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98108 is also the datasheet of 2SC1656 Grd C, see the Electrical Characteristics table) |
NEC |
| 4297 |
2SC1658 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98141 is also the datasheet of 2SC1658 Grd C, see the Electrical Characteristics table) |
NEC |
| 4298 |
2SC1662 |
NPN Silicon High Speed Switching Transistor (This datasheet of NE98241 is also the datasheet of 2SC1662 GRD C, see the Electrical Characteristics table) |
NEC |
| 4299 |
2SC1688 |
For high-frequency amplification |
Panasonic |
| 4300 |
2SC1706 |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
| 4301 |
2SC1706H |
SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING |
Hitachi Semiconductor |
| 4302 |
2SC1723 |
LOW FREQUENCY HIGH VOLTAHE POWER AMPLIFIER TV POWER SUPPLY DRIVER |
Unknow |
| 4303 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 4304 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 4305 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 4306 |
2SC1924 |
NPN silicon high speed switching transistor (This datasheet of NE32740A series is also the datasheet of 2SC1924, see the Electrical Characteristics table) |
NEC |
| 4307 |
2SC1925 |
NPN silicon high speed switching transistor (This datasheet NE32740B series is also the datasheet of 2SC1925, see the Electrical Characteristics table) |
NEC |
| 4308 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 4309 |
2SC1942 |
HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT |
Hitachi Semiconductor |
| 4310 |
2SC1988 |
NPN SILICON HIGH FREQUNY TRANSISTOR |
NEC |
| 4311 |
2SC1988 |
NPN SILICON HIGH FREQUNY TRANSISTOR |
NEC |
| 4312 |
2SC199 |
High-Speed Switching Transistor |
TOSHIBA |
| 4313 |
2SC199 |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 4314 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 4315 |
2SC2091 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 4316 |
2SC2092 |
HIGH FREQUENCY POWER AMPLIFIER |
Unknow |
| 4317 |
2SC21 |
High Power Switching Transistor |
TOSHIBA |
| 4318 |
2SC21 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| 4319 |
2SC2188 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 4320 |
2SC2204 |
Silicon NPN triple diffused MESA high power switching transistor |
TOSHIBA |
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